Antenna Handbook - Fundamentals and Mathematical Techniques by Y.T. Lo, S. W. Lee

By Y.T. Lo, S. W. Lee

Quantity 1: Antenna basics and Mathematical suggestions opens with a dialogue of the basics and mathematical recommendations for any type of paintings with antennas, together with uncomplicated rules, theorems, and formulation, and methods. DLC: Antennas (Electronics)

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By Y.T. Lo, S. W. Lee

Quantity 1: Antenna basics and Mathematical suggestions opens with a dialogue of the basics and mathematical recommendations for any type of paintings with antennas, together with uncomplicated rules, theorems, and formulation, and methods. DLC: Antennas (Electronics)

Show description

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C. transconductance can, to a first order approximation, be considered the same as the microwave transconductance. The measured transconductance, gm(obs) is lower than the intrinsic transistor gm owing to the gate-to-source resistance, Rs. c. 55 n 0 / / / / / u / f/ 5 812 O / c / ! 1 Derivation of the Open Channel Resistance, Roand Parasitic Series Resistance Rs and RD. current, Imax, zero-gate bias channel current, Idss and transconductance gm. 29 where ND is in units of 1016 cm"3. The small signal measured transconductance of a GaAs FET, gm(obs), agrees well with the predicted value using the expression 30 Microwave Field-Effect Transistors 091 where Ich is the channel current.

E. 60 where fu is the maximum frequency of oscillation. 2, fu, is 69 GHz. To maximize fu, the frequency fr and the resistance ratio Rds/Ri must be optimized. In addition the extrinsic resistances Rg and Rs and the feedback capacitance Cdg must be minimized. 64 where Ls is the inductance in the common source lead of the device. Thus it may be appreciated that in order to increase MAG the value of fr must be optimized whilst Rg, Rs and Cdg are minimized. 65 fmax is a figure of merit for the FET and is comparable to the figure of merit for the microwave bipolar transistor which is given by 40/S where S is the emitter strip width and S is in microns.

As xi moves towards the source the voltage at xi decreases and the conducting channel widens resulting in more current being injected into the velocity-saturated region. The IDS curve has a positive slope in this region with a finite drain-to-source resistance beyond current saturation (Grebene et al, 1969; Lehovec et al, 1975). GaAs FET Theory-Small Signal 21 Beyond xi the channel potential increases towards the drain widening the depletion layer with a corresponding decrease in the conducting channel cross section to less than di.

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